PRODUCTS

Silica Glass (Fused Quartz)

Contact Tosoh

To inquire about Silica Glass products and export for your market, please contact us at:

Tosoh Corporation (Headquarters)
Shiba-koen First Bldg.
3-8-2, Shiba, Minato-ku
Tokyo 105-8623
Japan
Contact Form

Tosoh Europe B.V.
Rembrandt Tower
Amstelplein 1

1096 HA Amsterdam
The Netherlands

Tel: +31 20 5650010
Fax: +31 20 6915458
E-mail: info.tse@tosoh.com
URL: www.tosoh-europe.com

Tosoh USA, Inc. (CA Sales Office)
6000 Shoreline Court Ste 101
South San Francisco CA 94080
USA
Tell: Toll Free +1 888 799 0025
Fax: +1 650 210 4362
E-mail: info.tsgm@tosoh.com

Tosoh Shanghai Co., Ltd. (Head Office)
Room 2618 International Trade Center
No. 2201 Yan-An West Road
Shanghai, China 200336
Tel: +86 21 6270 2810
Fax: +86 21 6270 2820
E-mail: info@tosoh.com.cn
URL: www.tosoh-tsc.com



As of Jan 1, 2012 Tosoh SGM USA, Inc. was merged with Tosoh USA, Inc. For inquiries on products, please refer to the CONTACT TOSOH box. 

Fused Silica Glass (Fused Quartz)

   
Material: N Series
Description:
Tosoh N and NP materials are manufactured by fusing a high-purity silica powder using Tosoh's proprietary oxy-hydrogen flame fusion process. Thanks to its high purity, low aluminum content, and extremely low level of bubbles and inclusions, N has become the reference material for a broad range of applications: semiconductor manufacturing, metrology, optics, chemical processing, UV and high-temperature windows to name a few.

In particular, N is an enabling material for stringent plasma etch processes used in leading-edge semiconductor manufacturing.

NP is an enhanced version of N material, with further reduced alkali content for use in processes that require extreme contamination control.

Available in up to 1,200mm square ingots, N and NP materials are 450mm wafer ready.


Grades  Features 
N Semiconductor standard grade
NP  Semiconductor high-purity grade 

   
Material: OP Series
Description:
Tosoh OP-1 and OP-3 materials are manufactured by fusing high-purity silica powder using Tosoh's proprietary oxy-hydrogen flame fusion process and a method of generating uniformly dispersed small bubbles inside the material. Thanks to its high purity and excellent infrared blocking properties, OP-1 has become the material of choice as a heat-insulating material for semiconductor and solar manufacturing equipment, such as RTP chambers and oxidation, diffusion, and CVD batch furnaces.

OP-3 is an enhanced version of OP-1 material, with further reduced alkali content for use in processes that require extreme contamination control.

OP-3HD is a high-density version of OP-3, with a smaller diameter bubble size distribution that provides enhanced sealing properties and lifetime for advanced batch furnace processes.

Available in up to 1,000mm round and square ingots, OP-1, OP-3, and OP-3HD materials are 450mm wafer ready.


Grades  Features 
OP-1 Semiconductor standard grade
OP-3  Semiconductor high-purity grade 
OP-3HD  High-density OP-3 grade 

   
Material: S Grade
Description:
Tosoh S material is manufactured by fusing a synthetic super high-purity silica powder using Tosoh's proprietary oxy-hydrogen flame process. Thank to its extreme purity and complete lack of inclusions, S material is the next generation of material for semiconductor manufacturing.

Available in up to 1,200mm square ingots, S material is 450mm wafer ready.

   
Files are in PDF format (requires Adobe Reader to view):
Brochure »

SDS »  
RoHS »  
ISO Certificate »  


Optical Fused Silica

   
Material: ES Series
Description:
ES ingots are manufactured from high-purity SiCl4 using an oxy-hydrogen flame in a verneuil type process.

For very large parts, such as LCD photomasks, ES ingots are reflown into large rectangular blocks.

ES ingots have a typical purity that exceeds the detection limit of 10ppb in all elements, and are virtually free of bubbles and inclusions.

As a result, ES is the material of choice for LCD photomasks up to Gen. 10, and selected subgrades are widely used in leading edge stepper (KrF and ArF) and optics applications.

   
Material: ED-H
Description:
ED-H ingots are manufactured from high-purity SiCl4 in a VAD process.

ED-H ingots have a typical purity that exceeds the detection limit of 10ppb in all elements, and are virtually free of bubbles and inclusions.

Thanks to an OH content less than 100ppm, ED-H material exhibits superior transmission characteristics in the deep UV and is a material of choice for VUV applications down to 170nm.

   
Files are in PDF format (requires Adobe Reader to view):
Brochure »

SDS »  
RoHS »  
ISO Certificate »